On July 2nd, an expert of the Chinese Academy of Sciences Planning Finance Bureau organized an acceptance survey for the research and development of the scientific equipment of the Chinese Academy of Sciences undertaken by the Xinjiang Institute of Physical and Chemical Technology, which is the "Electro-optical Imaging Device Anti-radiation Performance Testing Equipment".

The equipment consists of photoelectric response detection subsystem, spectral transfer function and spectral responsivity detection subsystem, radiometric calibration subsystem, control and data processing subsystem, and test assistant device. The device is capable of detecting the saturation output voltage, saturation exposure, optical radiation response, relative spectral response, non-uniformity of response, charge transfer efficiency, spectrum and white light transfer function, dark signal, dark noise, and noise equivalent of typical photoelectric imaging devices. The functions of the main characteristic parameters such as exposure amount, dynamic range, non-linearity, solid-state image noise, etc., and the relationship between the irradiation dose after irradiation and the decay of the ccd characteristic parameter of the photoelectric imaging device (ccd) can be measured.

The acceptance expert group listened carefully to the report of the project work performed by the project leader Guo Qi, and asked questions and discussed related issues. They all agreed that the photoelectric imaging device's anti-radiation performance testing equipment is a set of photoelectric imaging devices' radiation resistance quantitative detection. With the evaluation system, the full-parameter quantitative test and analysis of the radiation resistance of optoelectronic imaging devices such as ccd are realized for the first time in China; the project design is well-designed, the technical route is correct, and the files and technical data are accurate and complete, and the implementation plan is fully completed. The requirements of various functions and technical indicators; this equipment has been used in the assessment of the radiation resistance of optoelectronic imaging devices (ccd, cmos sensors) of several satellites, payloads, and devices developed by China Aviation Technology Corporation, China Electric Power Corporation, Changchun Institute of Optoelectronics, and Chinese Academy of Sciences. The evaluation was successfully applied. The project funds are used rationally and various development tasks have been completed in accordance with the requirements of the project task Book. The acceptance expert group unanimously agreed to pass the acceptance.

The research project has for the first time established a testing device for quantitatively evaluating the radiation resistance of optoelectronic imaging devices in China; for the first time, a comprehensive quantitative measurement and analysis of the performance parameters of ccd and other optoelectronic imaging devices has been realized in radiation tests; and the formed photoelectric imaging devices have been resistant to radiation. The detection technologies and methods fill the gaps in the field of domestic optoelectronic imaging device inspection and lay the foundation for the standardization and standardization of related inspection work.